Emir BardakçıNew leaks surfacing on February 10 via the Xianyu platform (user @忙忙的灯草) have exposed the packaging design for the upcoming Qualcomm Snapdragon 8 Elite Gen 6 Pro (SM8975). The leaked sketches highlight a significant shift in thermal management using Samsung’s HPB technology, alongside support for next-generation memory and storage standards.
Advanced Thermal Architecture
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The Innovation: The design incorporates Samsung’s HPB (Heat Path Block) technology, which integrates a heatsink sheet directly onto the top of the chip package.
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The Problem Solved: This replaces traditional stacking where DRAM sits atop the SoC like a “blanket,” which previously trapped heat and hindered performance.
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The Performance Target: By providing the core with necessary “breathing space,” this thermal solution is expected to help the chip stably achieve an ultra-high frequency of 5.00GHz without hitting thermal limits.
Next-Gen Memory & Storage Specs
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Memory Support: The SM8975 features advanced package-on-package technology, supporting both 4 x 24-bit LPDDR6 and 4 x 16-bit LPDDR5X memory configurations.
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Storage Standard: The leak confirms support for the dual-channel UFS 5.0 standard, promising significantly faster data transfer rates.
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The Flexibility: This dual-compatibility allows manufacturing partners to adjust configurations based on cost and performance needs, supporting both cutting-edge and standard flagship setups.
Model Comparisons & Context
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Standard vs. Pro: While the SM8975 (Elite Pro) pushes boundaries, the standard SM8950 is described as looking “quite ordinary,” supporting only standard LPDDR5.
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Prototype Limitations: The QRD8950 (Reference Design) reportedly features only one SKU and a 1-second power supply, highlighting the massive gap between the standard test units and the “Pro” consumer version.
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The Timeline: This leak represents the first look at the sixth-generation packaging, signaling a major leap in how Qualcomm intends to manage heat in future high-performance mobile silicon.
